通用
| 基础料号 | 20ETF10 |
|---|---|
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Through Hole |
| Product Status | Discontinued at |
| Reverse Recovery Time (trr) | 160 ns |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
VS-20ETF10PBF
Datasheet模拟与电源
DIODE GEN PURP 1KV 20A TO220AC
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 20 A |
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1000 V |
| 速度 | Fast Recovery =< 500ns, > 200mA (Io) |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-220-2 |
| 供应商器件封装 | TO-220AC |
环境
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|