V3N103HM3/I

Vishay General Semiconductor - Diodes Division

V3N103HM3/I

Datasheet

模拟与电源

3A, 100V, DFN3820A TRENCH SKY RE

在产2-VDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号V3N103
Capacitance @ Vr, F410pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount, Wettable Flank
Product StatusActive
系列TMBS®
技术Schottky

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If660 mV @ 3 A
Current - Average Rectified (Io)1.8A
Current - Reverse Leakage @ Vr200 µA @ 100 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case2-VDFN
供应商器件封装DFN3820A

环境

GradeAutomotive
Operating Temperature - Junction-40°C ~ 150°C
QualificationAEC-Q101