V2F6HM3/I

Vishay General Semiconductor - Diodes Division

V2F6HM3/I

Datasheet

模拟与电源

DIODE SCHOTTKY 60V 2A DO219AB

在产DO-219AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号V2F6
Capacitance @ Vr, F250pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
包装Tape & Reel (TR)
产品状态在产
系列eSMP®, TMBS®
技术Schottky

电气

Voltage - DC Reverse (Vr) (Max)60 V
Voltage - Forward (Vf) (Max) @ If600 mV @ 2 A
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr480 µA @ 60 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

Package / CaseDO-219AB
供应商器件封装DO-219AB (SMF)

环境

GradeAutomotive
Operating Temperature - Junction-40°C ~ 150°C
QualificationAEC-Q101