通用
| Capacitance @ Vr, F | 160pF @ 4V, 1MHz |
|---|---|
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | Schottky |
Vishay General Semiconductor - Diodes Division
V2F22-M3/I
Datasheet模拟与电源
DIODE SCHOTTKY 200V 2A DO219AB
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 870 mV @ 2 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 60 µA @ 200 V |
| 速度 | Fast Recovery =< 500ns, > 200mA (Io) |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | DO-219AB |
| 供应商器件封装 | DO-219AB (SMF) |
环境
| Operating Temperature - Junction | -40°C ~ 175°C |
|---|