通用
| 基础料号 | SE50 |
|---|---|
| Capacitance @ Vr, F | 32pF @ 4V, 1MHz |
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| Reverse Recovery Time (trr) | 2 µs |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
SE50PAJ-M3/I
Datasheet模拟与电源
DIODE GEN PURP 600V 5A DO221BC
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 2.5 A |
| Current - Average Rectified (Io) | 5A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| 速度 | Standard Recovery >500ns, > 200mA (Io) |
机械
| Package / Case | DO-221BC, SMA Flat Leads Exposed Pad |
|---|---|
| 供应商器件封装 | DO-221BC (SMPA) |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|