SE20DTLGHM3/I

Vishay General Semiconductor - Diodes Division

SE20DTLGHM3/I

Datasheet

模拟与电源

DIODE GEN PURP 400V 3.8A SMPD

在产TO-263-3, D2PAK (2 Leads + Tab), Variant模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F160pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
Reverse Recovery Time (trr)330 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1 V @ 20 A
Current - Average Rectified (Io)3.8A
Current - Reverse Leakage @ Vr5 µA @ 400 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
供应商器件封装SMPD

环境

GradeAutomotive
Operating Temperature - Junction-55°C ~ 175°C
QualificationAEC-Q101