SE12DDHM3/I

Name: SE12DDHM3/I
Brand: Vishay General Semiconductor - Diodes Division

模拟与电源

DIODE GEN PURP 200V 3.2A TO263AC

在产TO-263-3, D2PAK (2 Leads + Tab), Variant模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

基础料号	SE12
Capacitance @ Vr, F	90pF @ 4V, 1MHz
制造商	Vishay General Semiconductor - Diodes Division
安装类型	Surface Mount
包装	Tape & Reel (TR) Cut Tape (CT)
产品状态	在产
Reverse Recovery Time (trr)	3 µs
系列	eSMP®
技术	Standard

Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 12 A
Current - Average Rectified (Io)	3.2A
Current - Reverse Leakage @ Vr	20 µA @ 200 V
速度	Standard Recovery >500ns, > 200mA (Io)

Package / Case	TO-263-3, D2PAK (2 Leads + Tab), Variant
供应商器件封装	TO-263AC (SMPD)

Grade	Automotive
Operating Temperature - Junction	-55°C ~ 175°C
Qualification	AEC-Q101