S8M-E3/I

Vishay General Semiconductor - Diodes Division

S8M-E3/I

Datasheet

模拟与电源

8A, 1000V, STD RECT , SMC

在产DO-214AB, SMC模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号S8M
Capacitance @ Vr, F72pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
Reverse Recovery Time (trr)3.6 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr10 µA @ 1000 V
速度Standard Recovery > 500ns, > 1A (Io)

机械

Package / CaseDO-214AB, SMC
供应商器件封装DO-214AB (SMC)

环境

Operating Temperature - Junction-55°C ~ 150°C