通用
| 基础料号 | S8CK |
|---|---|
| Capacitance @ Vr, F | 79pF @ 4V, 1MHz |
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| Reverse Recovery Time (trr) | 4 µs |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
S8CK-M3/I
Datasheet模拟与电源
DIODE GEN PURP 800V 8A DO214AB
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 800 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 985 mV @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| 速度 | Standard Recovery >500ns, > 200mA (Io) |
机械
| Package / Case | DO-214AB, SMC |
|---|---|
| 供应商器件封装 | DO-214AB (SMC) |
环境
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|