通用
| 基础料号 | S07 |
|---|---|
| Capacitance @ Vr, F | 4pF @ 4V, 1MHz |
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.8 µs |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
S07M-GS08
Datasheet模拟与电源
DIODE GEN PURP 1KV 1.5A DO219AB
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Average Rectified (Io) | 1.5A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| 速度 | Standard Recovery >500ns, > 200mA (Io) |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-219AB |
| 供应商器件封装 | DO-219AB (SMF) |
环境
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|