P600D-E3/54

Vishay General Semiconductor - Diodes Division

P600D-E3/54

Datasheet

模拟与电源

DIODE GEN PURP 200V 6A P600

在产P600, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号P600
Capacitance @ Vr, F150pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Through Hole
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
Reverse Recovery Time (trr)2.5 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If900 mV @ 6 A
Current - Average Rectified (Io)6A
Current - Reverse Leakage @ Vr5 µA @ 200 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

Package / CaseP600, Axial
供应商器件封装P600

环境

Operating Temperature - Junction-50°C ~ 150°C