通用
| 基础料号 | NSB8 |
|---|---|
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| 包装 | Tube |
| 产品状态 | 停产/老旧 |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
NSB8BT-E3/45
Datasheet模拟与电源
DIODE GEN PURP 100V 8A TO263AB
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| 速度 | Standard Recovery >500ns, > 200mA (Io) |
机械
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|---|---|
| 供应商器件封装 | TO-263AB (D2PAK) |
环境
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|