通用
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
|---|---|
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| 系列 | Superectifier® |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
EGF1THE3_A/I
Datasheet模拟与电源
DIODE GEN PURP 1.3KV 1A DO214BA
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 3 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1300 V |
| 速度 | Fast Recovery =< 500ns, > 200mA (Io) |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-214BA |
| 供应商器件封装 | DO-214BA (GF1) |
环境
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |