BAY80-TR

Vishay General Semiconductor - Diodes Division

BAY80-TR

模拟与电源

DIODE GEN PURP 120V 250MA DO35

停产/老旧DO-204AH, DO-35, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BAY80
Capacitance @ Vr, F5pF @ 0V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Through Hole
包装Tape & Reel (TR)
产品状态停产/老旧
Reverse Recovery Time (trr)50 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)120 V
Voltage - Forward (Vf) (Max) @ If1.07 V @ 150 mA
Current - Average Rectified (Io)250mA
Current - Reverse Leakage @ Vr100 nA @ 120 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

Package / CaseDO-204AH, DO-35, Axial
供应商器件封装DO-204AH (DO-35)

环境

GradeAutomotive
Operating Temperature - Junction175°C (Max)
QualificationAEC-Q101