通用
| 基础料号 | BAS386 |
|---|---|
| Capacitance @ Vr, F | 8pF @ 1V, 1MHz |
| 制造商 | Vishay General Semiconductor - Diodes Division |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| 技术 | Schottky |
Vishay General Semiconductor - Diodes Division
BAS386-TR3
Datasheet模拟与电源
DIODE SCHOTT 50V 200MA MICROMELF
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 50 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 100 mA |
| Current - Average Rectified (Io) | 200mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 40 V |
| 速度 | Small Signal =< 200mA (Io), Any Speed |
机械
| Package / Case | 2-SMD, No Lead |
|---|---|
| 供应商器件封装 | MicroMELF |
环境
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -65°C ~ 150°C |
| Qualification | AEC-Q101 |