AR3PJHM3_A/I

Vishay General Semiconductor - Diodes Division

AR3PJHM3_A/I

Datasheet

模拟与电源

DIODE AVALANCHE 600V 1.8A TO277A

在产TO-277, 3-PowerDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号AR3
Capacitance @ Vr, F44pF @ 4V, 1MHz
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
包装Tape & Reel (TR)
产品状态在产
Reverse Recovery Time (trr)140 ns
系列eSMP®
技术Avalanche

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 3 A
Current - Average Rectified (Io)1.8A
Current - Reverse Leakage @ Vr10 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

Package / CaseTO-277, 3-PowerDFN
供应商器件封装TO-277A (SMPC)

环境

GradeAutomotive
Operating Temperature - Junction-55°C ~ 175°C
QualificationAEC-Q101