8EWS12S

Vishay General Semiconductor - Diodes Division

8EWS12S

模拟与电源

DIODE GEN PURP 1.2KV 8A DPAK

停产/老旧TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号8EWS12
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
包装Tube
产品状态停产/老旧
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr50 µA @ 1200 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装TO-252AA (DPAK)

环境

Operating Temperature - Junction-55°C ~ 150°C