8ETH03S

Vishay General Semiconductor - Diodes Division

8ETH03S

模拟与电源

DIODE GEN PURP 300V 8A TO263AB

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号8ETH03
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
Product StatusObsolete
Reverse Recovery Time (trr)35 ns
系列FRED Pt®
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)300 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr20 µA @ 300 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-263AB (D2PAK)

环境

Operating Temperature - Junction-65°C ~ 175°C