20ETS12S

Vishay General Semiconductor - Diodes Division

20ETS12S

模拟与电源

DIODE GEN PURP 1.2KV 20A TO263AB

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号20ETS12
制造商Vishay General Semiconductor - Diodes Division
安装类型Surface Mount
Product StatusObsolete
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 20 A
Current - Average Rectified (Io)20A
Current - Reverse Leakage @ Vr100 µA @ 1200 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Tube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-263AB (D2PAK)

环境

Operating Temperature - Junction-40°C ~ 150°C