通用
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| 制造商 | UnitedSiC |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |