通用
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| 制造商 | Transphorm |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |