TP65H035G4WS

Name: TP65H035G4WS
Brand: Transphorm

模拟与电源

GANFET N-CH 650V 46.5A TO247-3

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
制造商	Transphorm
安装类型	Through Hole
Product Status	Active
技术	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.8V @ 1mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
最大功耗	156W (Tc)

工作温度	-55°C~150°C