通用
| Rds On (Max) @ Id, Vgs | 18mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5218 pF @ 400 V |
| 制造商 | Transphorm |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | SuperGaN™ |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 2mA |