XPQR3004PB,LXHQ

Toshiba Semiconductor and Storage

XPQR3004PB,LXHQ

Datasheet

模拟与电源

40V U-MOS IX-H L-TOGL 0.3MOHM

在产8-PowerBSFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs0.3mOhm @ 200A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds26910 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
系列U-MOSIX-H
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C400A (Ta)
最大功耗750W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度175°C
QualificationAEC-Q101