XPN9R614MC,L1XHQ

Name: XPN9R614MC,L1XHQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 40V 40A 8TSON

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	Automotive, AEC-Q101, U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2.1V @ 500µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
最大功耗	840mW (Ta), 100W (Tc)

工作温度	175°C