XPH4R714MC,L1XHQ

Name: XPH4R714MC,L1XHQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 40V 60A 8SOP

在产8-SOIC (0.197", 5.00mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.7mOhm @ 30A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5640 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2.1V @ 1mA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
最大功耗	960mW (Ta), 132W (Tc)

工作温度	175°C