通用
| 基础料号 | ULN2803 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 8 NPN Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Power - Max | 1.47W |
机械
| 封装 | Tube |
|---|---|
| Package / Case | 18-DIP (0.300", 7.62mm) |
| 供应商器件封装 | 18-DIP |
环境
| 工作温度 | -40°C ~ 85°C (TA) |
|---|