TW027N65C,S1F

Name: TW027N65C,S1F
Brand: Toshiba Semiconductor and Storage

模拟与电源

G3 650V SIC-MOSFET TO-247 27MOH

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	37mOhm @ 29A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2288 pF @ 400 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	5V @ 3mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
最大功耗	156W (Tc)

工作温度	175°C