通用
| 基础料号 | TTC0002 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
|---|---|
| Current - Collector (Ic) (Max) | 18 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Power - Max | 180 W |
| Frequency - Transition | 30MHz |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-3PL |
| 供应商器件封装 | TO-3P(L) |
环境
| 工作温度 | 150°C (TJ) |
|---|