通用
| 基础料号 | TPW1R005 |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 22.5 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| 系列 | U-MOSIX-H |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |