TPH5R60APL,L1Q

Name: TPH5R60APL,L1Q
Brand: Toshiba Semiconductor and Storage

模拟与电源

PB-F POWER MOSFET TRANSISTOR N-C

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 50 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIX-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 500µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
最大功耗	960mW (Ta), 132W (Tc)

工作温度	175°C