TPH4R008QM,LQ

Name: TPH4R008QM,LQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

POWER MOSFET TRANSISTOR SOP8-ADV

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4mOhm @ 43A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5300 pF @ 40 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIX-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 600µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	86A (Tc)
最大功耗	960mW (Ta), 170W (Tc)

工作温度	175°C