TPH3R70APL1,LQ

Name: TPH3R70APL1,LQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

150V U-MOS IX-H SOP-ADVANCE(N) 3

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.7mOhm @ 45A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6300 pF @ 50 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	170A (Ta), 90A (Tc)
最大功耗	3W (Ta), 210W (Tc)

工作温度	175°C