TPH3R704PL,L1Q

Toshiba Semiconductor and Storage

TPH3R704PL,L1Q

Datasheet

模拟与电源

MOSFET N-CH 40V 92A 8SOP

在产8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.7mOhm @ 46A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 20 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
系列U-MOSIX-H
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 200µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C92A (Tc)
最大功耗960mW (Ta), 81W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装8-SOP Advance (5x5)

环境

工作温度175°C