TPH1R204PL1,LQ

Name: TPH1R204PL1,LQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.24mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7200 pF @ 20 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIX-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 500µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
最大功耗	960mW (Ta), 170W (Tc)

工作温度	175°C