TPH1500CNH1,LQ

Toshiba Semiconductor and Storage

TPH1500CNH1,LQ

Datasheet

模拟与电源

150V U-MOS VIII-H SOP-ADVANCE(N)

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15.4mOhm @ 19A, 10V
基础料号TPH1500
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 75 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C74A (Ta), 38A (Tc)
最大功耗2.5W (Ta), 170W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
供应商器件封装8-SOP Advance (5x5.75)

环境

工作温度150°C