TPCF8402(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8402(TE85L,F,M

模拟与电源

MOSFET N/P-CH 30V 4A/3.2A VS-8

停产/老旧8-SMD, Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs50mOhm @ 2A, 10V
基础料号TPCF8402
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C4A, 3.2A
Power - Max330mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
供应商器件封装VS-8 (2.9x1.5)

环境

工作温度150°C (TJ)