TPCC8105,L1Q(CM

Name: TPCC8105,L1Q(CM
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 30V 23A 8TSON

在产8-VDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7.8mOhm @ 11.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -25V
Vgs(th) (Max) @ Id	2V @ 500µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	23A (Ta)
最大功耗	700mW (Ta), 30W (Tc)

工作温度	150°C