通用
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 10A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 10 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) |
| 产品状态 | 在产 |
| 系列 | U-MOSVI |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | +20V, -25V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |