TPCC8008(TE12L,QM)

Name: TPCC8008(TE12L,QM)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 30V 25A 8TSON

停产/老旧8-VDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.8mOhm @ 12.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
系列	U-MOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	2.5V @ 1A

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
最大功耗	700mW (Ta), 30W (Tc)

工作温度	150°C (TJ)