TPC8A02-H(TE12L,Q)

Name: TPC8A02-H(TE12L,Q)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 30V 16A 8SOP

停产/老旧8-SOIC (0.173", 4.40mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.6mOhm @ 8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1970 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	16A (Ta)
最大功耗	1W (Ta)

工作温度	150°C (TJ)