TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

模拟与电源

MOSFET N/P-CH 30V 6A/4.5A 8SOP

停产/老旧8-SOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs26mOhm @ 3A, 10V
基础料号TPC8405
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1240pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C6A, 4.5A
Power - Max450mW

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.173", 4.40mm Width)
供应商器件封装8-SOP (5.5x6.0)

环境

工作温度150°C (TJ)