TPC8207(TE12L)

Toshiba Semiconductor and Storage

TPC8207(TE12L)

模拟与电源

MOSFET 2N-CH 20V 6A 8-SOP

停产/老旧8-SOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 4.8A, 4V
基础料号TPC8207
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 200µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C6A
Power - Max750mW

机械

Package / Case8-SOIC (0.173", 4.40mm Width)
供应商器件封装8-SOP (5.5x6.0)