TPC8115(TE12L,Q,M)

Name: TPC8115(TE12L,Q,M)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 20V 10A 8SOP

停产/老旧8-SOIC (0.173", 4.40mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 5A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	9130 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
系列	U-MOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1.2V @ 200µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
最大功耗	1W (Ta)

工作温度	150°C (TJ)