TPC8109(TE12L)

Toshiba Semiconductor and Storage

TPC8109(TE12L)

模拟与电源

MOSFET P-CH 30V 10A 8-SOP

停产/老旧8-SOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 5A, 10V
基础料号TPC8109
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)

机械

封装Cut Tape (CT)
Package / Case8-SOIC (0.173", 4.40mm Width)
供应商器件封装8-SOP (5.5x6.0)