TPC6109-H(TE85L,FM

Name: TPC6109-H(TE85L,FM
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 30V 5A VS-6

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	59mOhm @ 2.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
系列	U-MOSIII-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.2V @ 200µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
最大功耗	700mW (Ta)

工作温度	150°C (TJ)