TPC6009-H(TE85L,FM

Name: TPC6009-H(TE85L,FM
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 40V 5.3A VS-6

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	81mOhm @ 2.7A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
系列	U-MOSVI-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 100µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
最大功耗	700mW (Ta)

工作温度	150°C(TJ)