TK9J90E,S1E

Name: TK9J90E,S1E
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 900V 9A TO3P

在产TO-3P-3, SC-65-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 900µA

漏源电压	900 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
最大功耗	250W (Tc)

工作温度	150°C (TJ)