TK90S06N1L,LQ

Name: TK90S06N1L,LQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 60V 90A TO252-3

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.3mOhm @ 45A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVIII-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 500µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	90A (Ta)
最大功耗	157W (Tc)

工作温度	175°C (TJ)