TK8P65W,RQ

Name: TK8P65W,RQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

PB-F POWER MOSFET TRANSISTOR DPA

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 300 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	DTMOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.5V @ 300µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta)
最大功耗	80W (Tc)

工作温度	150°C